| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Phase-Field Modeling of Insulator-Metal Transitions in Quantum Materials for Neuromorphic Microelectronics |
| Author(s) |
Yin Shi, Long-Qing Chen |
| On-Site Speaker (Planned) |
Yin Shi |
| Abstract Scope |
Strongly correlated quantum materials often exhibit insulator-metal transitions (IMTs) that can enable novel microelectronics applications such as neuromorphic computing. Understanding their electronic properties requires the ability to model nonequilibrium IMT processes at the mesoscale. We developed a phase-field methodology for IMTs in quantum materials and studied the neuron-like voltage self-oscillation phenomenon in a prototypical strongly correlated quantum material, VO2. We calculated the self-oscillation frequency dispersion in quantitative agreement with experiments and identified a fundamental frequency limit. We showed that the voltage self-oscillation can emerge without the aid of a capacitor, contrary to the previous perspective. We demonstrated that the inclusion of oxygen vacancies can systematically enhance the self-oscillation frequency. Our model and findings establish a theoretical framework for modeling the neuromorphic electrical behavior of quantum materials and provide strategies to enhance the performance of neuromorphic microelectronics. We also developed an open-source package, Q-POP-IMT, for simulating IMTs in quantum materials. |