| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advances and Discoveries in Non-equilibrium Driven Nanomaterials and Thin Films
|
| Presentation Title |
Characterization of High Quality Epitaxially Grown Diamond Thin Films |
| Author(s) |
Pranay Bhasker Kalakonda, Ratnakar D Vispute, Naveen Narasimhachar Joshi, Jagdish Narayan, Roger J Narayan |
| On-Site Speaker (Planned) |
Pranay Bhasker Kalakonda |
| Abstract Scope |
High quality single-crystalline diamond thin films are much desired for applications in advanced electronics. Here, heteroepitaxial and homoepitaxially grown diamond thin films are characterized and a parallel has been drawn between them. Heteroepitaxial diamond was grown via HFCVD technique, on (0001) and (11-20) oriented sapphire substrates with Ni buffer and Q-carbon seed layer, by DME paradigm. Q-carbon seed layer (10-20nm) deals with nucleation barrier. Homoepitaxial diamond films were grown in MWPECVD reactor on HPHT synthesized diamond substrates, and provided by Blue Wave Semiconductors Inc. Line-width of diamond peaks obtained by Raman and PL measurements, HR-XRD rocking curves establish quality of films. The presence of impurities can be found by other characteristic peaks in Raman and PL measurements. HR-SEM images show the surface features. The surface roughness and depth profiling were obtained from AFM analysis. Heterostructure growth and orientation relationships were determined from cross-sectional HRTEM, EBSD analysis and XRD phi scans. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Characterization, Electronic Materials |