| About this Abstract |
| Meeting |
2023 TMS Annual Meeting & Exhibition
|
| Symposium
|
Functional Nanomaterials 2023
|
| Presentation Title |
Study on Aluminum Oxide Thin Film as Etch Stop Layer |
| Author(s) |
Sangwoo Lee, Taekjib Choi, Jaeyoung Yang, Joohyun Park |
| On-Site Speaker (Planned) |
Sangwoo Lee |
| Abstract Scope |
Etch stop layers (ESL) are used in patterning process of the Integrated circuit (IC) fabrication to protect the active layer, which are inter layer dielectrics (ILD) and metal lines, from being damaged during the etching process. The ESL material should have a higher etch selectivity than the active layer. Aluminum oxide compounds (AlOx, AlOC, AlON and AlOCN) are highly suitable for use as ESL due to low dielectric constant (4-9), high etch selectivity, high density (2.5-3.8 g/cm3) and pattern transfer capability. In this work, we focused on lowering the dielectric constant of the amorphous aluminum oxide and increasing the density by controlling the PVD and CVD deposition condition |
| Proceedings Inclusion? |
Planned: |