| About this Abstract |
| Meeting |
2021 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties & Applications
|
| Presentation Title |
Formation of h-BN Ultrathin Films and Heterojunction MIS Diodes by Pulsed Laser Annealing |
| Author(s) |
Siddharth Gupta, Ritesh Sachan , Jagdish Narayan |
| On-Site Speaker (Planned) |
Siddharth Gupta |
| Abstract Scope |
We present conversion of amorphous BN into single-crystal h-BN ultrathin films by nanosecond laser annealing. Further, metal-insulator-semiconductor (MIS) tunneling diode configuration is achieved by nanosecond laser melting amorphous C/BN (a-BN/a-BN) multilayered films in an undercooled state, thereby zone-refining carbon to form rGO (M)/h-BN(I)/Si (n-type) heterostructures. Improved threshold voltage and low leakage current was observed in MIS (4.4 V) compared to the MS Schottky (0.4 V) architecture. The MIS diode exhibit direct tunneling conduction under low bias, with Fowler-Nordheim tunneling in the high voltage regime, turning the MIS diode ON, with improved rectification and current flow. With these results, we propose the non-equilibrium undercooling-assisted laser annealing pathway to fabricate h-BN/graphene heterostructures for studying emergent physical phenomena in ultrathin FET devices. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Process Technology |