| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Oxygen Permeability in Single-Crystal Indium Oxide Ceramics and Reliability Characteristics in Vertical Channel FETs |
| Author(s) |
Jun Ishikawa, Ryosuke Motoyoshi, Etsuko Asano, Toshikazu Ohno, Yuji Egi, Sachiaki Tezuka, Hiromi Sawai, Fumito Isaka, Takanori Matsuzaki, Tatsuya Onuki, Shunpei Yamazaki |
| On-Site Speaker (Planned) |
Jun Ishikawa |
| Abstract Scope |
An increase in power consumption of IT devices is a cause of global warming, and measures in hardware are necessary. A vertical FET using single-crystal In2O3 ceramics that we have researching and developing has a feature of having higher on-state current than an IGZO-based FET as well as off-state current at a level of 10-21 A/μm that is nearly 10 orders of magnitude lower than that of a silicon-based FET.
We have found oxygen passing through single-crystal In2O3. This characteristic enables oxygen vacancies in single-crystal In2O3 to be filled with oxygen supplied from the outside and excess oxygen to be released outward. Consequently, the vertical FET with the single-crystal indium oxide has a significantly small change in Vth in a +GBT test and high reliability. We believe that use of single crystal In2O3 in VLSI will result in power saving in data centers etc., contributing to global warming mitigation. |