About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Mechanical Behavior Related to Interface Physics IV
|
| Presentation Title |
Effect of Back-Switching on Kinetics of Ferroelastic Domain Switching: A Phase Field Study |
| Author(s) |
Avisor Bhattacharya, Mohsen Asle Zaeem |
| On-Site Speaker (Planned) |
Avisor Bhattacharya |
| Abstract Scope |
Back-switching has gained significant attention because of its detrimental effect in ferroelectric materials which is mediated by ferroelasticity. In the present work, using a phase-field model, we study the kinetics of ferroelastic domain switching and unravel the mechanism of back-switching. A single crystal of yttria-stabilized-zirconia is subjected to constant load and deformation at two strain rates. Generally, ferroelastic back-switching takes place when the applied load is dropped, but the present work reveals that during reversed loading, along with normal switching, back-switching also takes place at the sharp corners of domain walls. Though ferroelastic domain switching follows Kolmogorov-Avrami-Ishibashi kinetics, this kinetics deviates significantly due to back-switching. The domain wall, unaffected by back-switching, is observed to move with constant velocity under constant load while it accelerates for both strain rates In yttria-stabilized-zirconia, back-switching improves the toughness as it absorbs additional applied deformation energy. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Modeling and Simulation, Mechanical Properties, |