| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials
|
| Presentation Title |
Interfacial Reaction Between Electroplated Indium and Copper Substrate |
| Author(s) |
Yu-Hsin Lin, Fu-Ling Chang, C. Robert Kao |
| On-Site Speaker (Planned) |
Yu-Hsin Lin |
| Abstract Scope |
In this study, the morphologies and growth kinetics of IMC formed during the solid-state interfacial reaction between In and Cu substrates were investigated. Ion milling system equipped with cooling unit was used to prevent In from melting by the heat generated during the ion milling process. Indium was electroplated onto the Cu substrate at 25 °C, it turned out that CuIn2 formed rapidly during the electroplating process. The solid-state interfacial reaction was investigated at 60 °C, 80 °C, 100 °C, and 120 °C for up to 1000 h. Both CuIn2 and Cu11In9 formed at 60 °C, 80 °C, and 100 °C, while only Cu11In9 could exist at 120 °C. The growth kinetics of the Cu/In IMCs followed parabolic law, indicating that the reaction was diffusion-controlled. The Ta diffusion marker experiment showed that indium was the dominant diffusing species. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Joining, Phase Transformations |