| About this Abstract |
| Meeting |
2021 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties & Applications
|
| Presentation Title |
Mechanism of Strain Transfer in Transition Metal Dichalcogenides for Phase Change Transistors |
| Author(s) |
Shoieb Ahmed Chowdhury, Tara Peņa, Stephen M. Wu, Hesam Askari |
| On-Site Speaker (Planned) |
Shoieb Ahmed Chowdhury |
| Abstract Scope |
Transition metal dichalcogenides (TMD) based transistors are attracting interest due to the superior performance in offer by eliminating static and dynamic power consumption problems associated with conventional switching mechanism. Recently, it has been shown that the transformation between semiconducting and metallic/semi-metallic phases using nanoscale strain engineering results in such switching behavior at device scale. Since strain is the driving factor in controlling electrical properties in these materials, we use a combination of modelling and experimental approaches to examine and quantify the mechanism of strain transfer in multilayer TMDs. Using molecular dynamics (MD) models with spectroscopy such as RAMAN the length scale of strain transfer is explored for several TMDs including MoS2, MoSe2, MoTe2 along with the effects of chalcogen and transition metal atoms. Results from the atomistic model coupled with observations from Raman spectroscopy reveals the mechanism of strain transfer at device scale and its efficiency in various experimental setups. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Computational Materials Science & Engineering, Mechanical Properties |