| About this Abstract |
| Meeting |
2022 TMS Annual Meeting & Exhibition
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| Symposium
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Functional Nanomaterials: Functional Low-Dimensional (0D, 1D, 2D) Materials 2022
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| Presentation Title |
The Scaling of Low-temperature Ferroelectric Hf0.5Zr0.5O2 Thin Films Using Anhydrous H2O2 |
| Author(s) |
Yong Chan Jung, Jin-Hyun Kim, Jaidah Mohan, Heber Hernandez-Arriaga, Su Min Hwang, Daniel Alvarez, Jeffrey Spiegelman, Si Joon Kim, Jiyoung Kim |
| On-Site Speaker (Planned) |
Yong Chan Jung |
| Abstract Scope |
In this study, the effect of film thickness and anhydrous H2O2 on ferroelectric properties of low-temperature Hf0.5Zr0.5O2 (HZO) films are investigated. In our previous study, it was reported that very thin (~5 nm) films required higher energy for crystal nucleation and growth [1]. Interestingly, an oxygen source of the anhydrous H2O2 acts as a good chemically driven densifier by producing highly dense hydroxyl surface [2]. As a result, the 10 and 7 nm-thick HZO were crystallized at the deposition temperature of 300 °C without annealing process. The 5 nm-thick HZO was crystallized into the ferroelectric orthorhombic phase during 400 °C annealing process. It is confirmed that anhydrous H2O2 reduces the crystallization temperature by enabling more closely compacted HZO film deposition.
[1] S. J. Kim et al., Appl. Phys. Lett. 112, 172902 (2018).
[2] S. W. Park et al., Surf. Sci. 652, 322 (2016) |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Electronic Materials, Phase Transformations |