| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Scalable 2D Semiconductor-Based Field Effect Transistor Nanosensor for Emerging Contaminants Detection |
| Author(s) |
Md Mohidul Alam Sabuj, Sufian Abedrabbo, Mengqiang Zhao |
| On-Site Speaker (Planned) |
Mengqiang Zhao |
| Abstract Scope |
Two-dimensional (2D) materials such as Graphene and transition Metal dichalcogenides (TMDs, e.g., MoS2) are promising candidates for sensor applications. However, sensors based on these 2D materials always require proper chemical functionalization with a probe molecule to achieve the selective recognition of target molecules and ions, which always involves a complex and difficult process. Here, we developed a hexagonal boron nitride (hBN)-assisted functionalization process for the fabrication of highly scalable 2D materials-based field-effect transistor (FET) nanosensors through a single chemistry. We successfully fabricated arrays of 2D MoS2-based FET sensors for the sensitive and selective detection of different emerging contaminants, such as PFAS Pb2+ ions. The results show that low limit-of-detection values of 0.001 ppb and 0.07 ppb have been achieved for PFAS and Pb2+ ion, respectively, which also exhibit promising selectivities. The approach could be easily applied to other 2D materials, therefore providing a universal pathway towards nanosensor fabrication. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Nanotechnology, Electronic Materials, Environmental Effects |