| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Thin Films and Coatings: Properties, Processing and Applications
|
| Presentation Title |
Optical and Structural Characterization of Highly Doped Nanocrystals Based on Group IV Semiconductors for Plasmonic Applications |
| Author(s) |
Herve Rinnert |
| On-Site Speaker (Planned) |
Herve Rinnert |
| Abstract Scope |
Due to their potential use in a wide range of optoelectronic applications, nanocrystals (NCs) exhibiting localized surface plasmon resonance (LSPR) have induced a strong research activity. Highly doped semiconductors NCs have recently gained a significant attention because the LSPR frequency can be tuned by controlling the free carrier concentration and to be redshifted as compared to metals. Because of their CMOS compatibility, group IV-based NCs are promising materials for plasmonic application. Here, phosphorus-doped Si-NCs and Ge-NCs were obtained by elaboration of phosphorus-doped SiO/SiO2 multilayers and phosphorus-doped Ge-rich GeO2 layers in ultrahigh vacuum. The nanocrystal size and the dopants localization were studied at the nanoscale by scanning transmission electron microscopy and the plasmonic response was modeled using the Mie theory and the Drude model. The presentation will address how the dopant concentration, the NCs size and the host matrix control the optical properties of the thin films. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Nanotechnology, Characterization |