| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Printed Electronics and Additive Manufacturing: Advanced Functional Materials, Processing Concepts, and Emerging Applications
|
| Presentation Title |
Bilayer Molybdenum Disulfide Strain Controlled Field Effect Transistor |
| Author(s) |
Cengiz Ozkan |
| On-Site Speaker (Planned) |
Cengiz Ozkan |
| Abstract Scope |
Silicon nitride stress-capping layers are pivotal in the semiconductor industry for their role in enhancing electron mobility and driving currents in n-channel silicon MOSFETs. We describe the effects of silicon nitride-induced strain on the electronic properties of bilayer-Molybdenum-Disulfide (MoS2), a promising two-dimensional semiconductor. We first examine the modifications in photoluminescence and Raman spectra of bare bilayer MoS2 under strain. By depositing a silicon nitride stress liner on a bilayer MoS2 field effect transistor (FET), which impacts both the gate and the source-drain regions, we replicate the stress conditions akin to those experienced in silicon MOSFETs. This approach enables us to comprehensively study the evolution from back-gated to top-gated, and ultimately, to strain-gated FET configurations. Our findings indicate that tensile strain crucially modifies the electronic structure of MoS2, primarily reducing the indirect band gap. Performance evaluations of the FETs demonstrate a marked increase in electron-mobility and on-current in the strain-gated configurations. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Process Technology |