| Abstract Scope |
Integration of complex oxides epitaxially on Si has been an issue for exploiting their full potential in microelectronic devices. Here, I discuss two strategies to do that: monolithic strategy by incorporating epitaxial buffer layers such as TiN, and heterogenous integration strategies where BaTiO3 is grown on one substrate and transferred as a membrane to desired substrate of interest. We show robust ferroelectricity on these platforms
Then, I will discuss our strategy of inducing defects in these materials in the form of non-stoichiometry, which will enhance and make BTO, a giant electrostrictor in frequencies <10 kHz. These materials belong to the greater ecosystem of defect induced giant electrostrictors.
References:
1. SK Parathe, ..., P. Nukala., Nature Communications 2024, 15, #1428
2. A. Haque, P. Nukala*, S. Raghavan*, Materials Today Electronics, 8, 100091, 2024
3. S.Mondal,..., P. Nukala, Scripta Materialia, 246, 116129, 2024 |