| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XIII
|
| Presentation Title |
Enhancing Stability and Performance of GeTe Thermoelectric Materials |
| Author(s) |
Albert T. Wu, Cheng-Hao Kung , Jyun-Yong Huang, Chun-Han Ku |
| On-Site Speaker (Planned) |
Albert T. Wu |
| Abstract Scope |
GeTe thermoelectric materials have gained significant attention due to their small band gap and excellent zT values. However, reliability issues remain a concern for the application of thermoelectric bulk materials and thin films. For bulk thermoelectric modules, interfacial reactions at the junction between thermoelectric materials and metal electrodes are severe, potentially leading to material degradation after long-term aging. These reactions affect the electrical and thermoelectric properties of the module. The addition of a diffusion barrier can improve interfacial stability and enhance thermoelectric properties. In comparison to bulk GeTe, thin film GeTe faces different challenges. Stoichiometric GeTe thin films can be successfully deposited, but after 30 days of aging at 350°</SUPC, the films become discontinuous and rough. Various defects, such as Te evaporation and Ge segregation, are observed on the surface. Controlling the deposition parameters and thermal treatment can greatly enhance the stability of the film. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Energy Conversion and Storage, Thin Films and Interfaces, |