| Abstract Scope |
The ability to simultaneously probe the electrical properties of nanowires under tensile strain allows for new insights and understanding of material properties. Due to the low defect density in nanowires, these samples are often able to withstand extreme mechanical conditions beyond what is achievable with bulk counterparts. In this work, Ge and Te nanowires are used to probe fundamental relationships between their intrinsic resistivity and mechanical state. In both cases, tensile strain can be applied reliably and reversibly. By using a variety of electrical measurement conditions, a deeper understanding is gained regarding how the electronic band structure contributes to the conductivity of the wire. For the case of Ge, these results suggest that new, more efficient piezoresistive electronic devices can be realized. However, they also suggest that the ability to ever achieve a direct bandgap emission device from Ge may be extraordinarily difficult. |