| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XIII
|
| Presentation Title |
Stoichiometric Effect of SnTe on Thermoelectric Property |
| Author(s) |
Chun-Han Ku, Alber T. Wu |
| On-Site Speaker (Planned) |
Chun-Han Ku |
| Abstract Scope |
SnTe has attracted significant attention as a potential alternative to PbTe due to its promising thermoelectric properties. However, its relatively high lattice thermal conductivity and the volatility of Te limit its performance and reliability. In this study, we focused on the effect of different ratios of SnTe thin films and their aging. SnTe films were fabricated using the co-sputtering method with varying compositions. Excess Sn or Te atoms can exist as antisite defects or dopants. Antisite defects generate additional electrons and holes, enhancing electrical conductivity, while dopants reduce lattice thermal conductivity, thereby improving thermoelectric properties. Long-term aging has shown that excess Sn and Te influence the volatility of Te, significantly impacting the material's long-term reliability and stability, which is a crucial factor for practical applications in thermoelectric devices. Therefore, optimizing the composition and understanding the long-term effects are essential for advancing SnTe as a reliable thermoelectric material. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Characterization, Surface Modification and Coatings |