| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Materials for Energy Conversion and Storage VI
|
| Presentation Title |
Enhanced Photo Response by Oxygen Retreatment at Hetero-interface of MoS2/Si Solar Cells |
| Author(s) |
Sangram Keshari Pradhan, Messaoud J Bahoura |
| On-Site Speaker (Planned) |
Sangram Keshari Pradhan |
| Abstract Scope |
Designing the appropriate/suitable band structures of dichalcogenide materials is crucial for its promising applications. Especially, thin molybdenum disulfide (MoS2) film is further attractive as compare to its monolayer counterpart for broad-spectral photo-detectors and photovoltaic application. Modification of the n-type MoS2/p-type Si hetero-junction interface issues by pre-pulsing with oxygen few tens of seconds during the deposition MoS2 films. With such a pretreatment process, the defects distribution and electric field greatly change at the hetero-interface, which influences the MoS2/Si solar cells photovoltaic properties. However, very little understanding regarding the underlying physics behind the photo-response behavior of thin MoS2 films is known. By adding the O2 during the laser pulsing, the oxygen vacancy defects significantly decreased and the built in electric field was greatly enhanced, contributing to the reduced defect recombination losses and improved carrier extraction at MoS2/Si interface. As a result, the MoS2/Si solar cells performance (Voc, FF and photo-response) were improved. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |