| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Investigation of Electromigration Lifetime for Cu-Cu Joints With Various Microstructures |
| Author(s) |
Hsin-Yu Tsai, Chih Chen |
| On-Site Speaker (Planned) |
Hsin-Yu Tsai |
| Abstract Scope |
Electromigration (EM) is one of the reliability concerns for interconnects. The EM in solder joints has been studied widely. However EM for the Cu-Cu joints is still lack of in-depth investigation.
To explore EM behaviors in Cu-Cu joints with various microstructures, we conducted Cu-Cu direct bonding at different temperatures including 200°C, 250°C, and 300°C. The samples were bonded at 47 MPa for 1 hour in vacuum ambient. Bonding interface elimination was observed in the Cu-Cu joints bonded at 300°C, forming a robust interface which could mitigate EM damage at the Cu-Cu joints. Therefore, the EM failures were prone to happen at the Cu traces where the maximum current density located. Conversely, planar bonding interfaces without recrystallization and grain growth can lead to the formation of pancake-like voids at the interface. Consequently, the EM lifetime could be influenced by the microstructure of the bonding interfaces. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Copper / Nickel / Cobalt, Electronic Materials, Other |