| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials II
|
| Presentation Title |
Characterization of FCQFN Solder Interconnects Incorporating Ni Metallization for Advanced High-Power Automobile Applications: An Electromigration Study |
| Author(s) |
Yu-Chun Liu, Min-Yan Tsai, Meng-Chun Chiu, Shan-Bo Wang, Yung-Sheng Lin, Chien-Lung Liang |
| On-Site Speaker (Planned) |
Yu-Chun Liu |
| Abstract Scope |
In this study, Pb-free solder interconnects fabricated using a flip-chip quad flat no-lead (FCQFN) packaging technology was proposed for high-power automobile applications featuring high current inputs and temperature operating environments. Electromigration study of the Cu pillar/Ni/Sn1.8Ag/Ag/Cu lead frame and Cu pillar/Sn1.8Ag/Ag/Cu lead frame solder interconnects was investigated with 2 A at 160°C for 500, 1000, and 1500 h. The elemental compositions of the intermetallic compounds (IMCs) formed at the interfaces were analyzed using an electron probe micro-analyzer (EPMA). The grain size, morphology, and orientation of the IMCs and solder matrix were further analyzed using electron backscatter diffraction (EBSD). The effects of Ni metallization in the FCQFN solder interconnect were investigated in terms of interfacial microstructure modification. The in situ monitoring of the electrical resistance of the solder interconnects was also performed, accompanying the growth of interfacial IMC layers and the formation of Kirkendall voids. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Surface Modification and Coatings, Other |