| Abstract Scope |
Hybrid bonding is a solder-free direct bonding technique mainly used in advanced semiconductor packaging. This technology can achieve simultaneous bonding of metal and dielectric layers through pressure, temperature, and chemical reactions, enhancing PPA (performance, power, area) metrics. Cu/SiO2 hybrid bonding technology is currently mainstream, however, the tendency of copper to oxidize requires bonding conditions to be controlled in a low-oxygen pressure vacuum environment or surface passivation layers to prevent oxide layers from hindering copper atom diffusion. Therefore, silver is considered a highly potential bonding material for direct bonding in atmospheric environments. In this study, highly (111)-oriented nanotwinned Ag bumps were prepared by sputtering techniques. Then the hybrid bonding for nanotwinned Ag with SiO2 was investigated at different conditions. The microstructure and bonded strength of hybrid bonded bumps were examined. The effects of surface activation and CMP planarization processes on hybrid bonding were discussed as well. |