| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Aluminum Reduction Technology
|
| Presentation Title |
Comparative Analysis of Self-Compensating Busbar Scheme and External-Compensating Busbar Scheme for Aluminum Reduction Cells |
| Author(s) |
Zhuojun Xie, Feiya Yan, Shaoyong Ruan, Chaohong Yang, Yi Yang, Ruixue Wang, Lan Gou |
| On-Site Speaker (Planned) |
Zhuojun Xie |
| Abstract Scope |
In recent years, the expansion of aluminum reduction cell scales has led to the prominence of 500kA-class cells. With the escalation in current intensity, busbar design faces heightened challenges. An excellent busbar system stands as a prerequisite for ensuring secure, stable, ordered, and efficient production within aluminum reduction cells. Presently, two mainstream busbar configuration schemes are employed for 500kA reduction cells: the self-compensating and external-compensating schemes. This study conducts simulations and calculations of busbar systems for both schemes, from the perspectives of magnetic fields, electrical balance, flow velocity fields, and MHD stability. Combined with the results of on-site testing, a comprehensive comparative analysis of these two busbar schemes is executed. |
| Proceedings Inclusion? |
Planned: Light Metals |
| Keywords |
Aluminum, |