| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Thin Films and Coatings: Properties, Processing and Applications
|
| Presentation Title |
Doping/Alloying Enabled Tunable Optical Properties of Epitaxial β-Ga2O3 Thin Films |
| Author(s) |
Debabrata Das, Francelia Sanchez Escobar, Nathan Episcopo, C.V. Ramana |
| On-Site Speaker (Planned) |
Debabrata Das |
| Abstract Scope |
Realising and optimising the optical properties for tunable and enhanced emission characteristics is critical to further advance the optoelectronics, photonics, and electronics fields for extreme environment applications. Recent advances have enabled high-quality single crystals of Ga2O3, an exciting material for electronics and optoelectronics, to obtain enhanced functionality and desired optical properties in epitaxial Ga2O3 without using expensive growth techniques and cumbersome equipment. Here, we demonstrated pure and doped/alloyed epitaxial β-Ga2O3 thin films using a trivial pulsed laser deposition technique. We conducted photoluminescence experiments on β-Ga2O3 thin films made by pulsed laser deposition onto sapphire substrates. These measurements involved studying the dependence of excitation and time on the photoluminescence properties. The luminescence spectra of all the samples exhibit transitions in the form of clearly defined peaks and shoulders, which remain constant throughout time. The peak location, linewidth, and recombination durations of all the transitions remain almost constant regardless of the excitation. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Characterization, High-Temperature Materials |