| Abstract Scope |
Dislocations in semiconductors are typically less mobile than in metals, which causes the brittleness and insufficient mechanical reliability of semiconductors and their devices. Manipulating dislocation motion through external stimuli, such as electric fields and illumination, holds promise for improving semiconductor manufacturing and applications.
In this study, we visualize and analyze the dislocation evolution under electric fields and illumination by combining transmission electron microscopy (TEM), in situ electrical testing system, photo-nanoindentation and density functional theory (DFT) calculations.
This study provides direct experimental evidence of dislocation dynamics under electric fields and illumination, opening opportunities for dislocation engineering in semiconductors. |