| About this Abstract |
| Meeting |
2022 TMS Annual Meeting & Exhibition
|
| Symposium
|
Mechanical Behavior at the Nanoscale VI
|
| Presentation Title |
Achieving Micron-scale Plasticity and Theoretical Strength in Silicon |
| Author(s) |
Ming Chen, Laszlo Pethö, Alla Sologubenko, Johann Michler, Ralph Spolenak, Jeffrey M. Wheeler |
| On-Site Speaker (Planned) |
Jeffrey M. Wheeler |
| Abstract Scope |
As the backbone material of the information age, silicon is extensively used as a functional semiconductor and structural material in microelectronics and microsystems. At ambient temperature, the brittleness of Si limits its mechanical application in devices. Here, we demonstrate that Si processed by modern lithography procedures exhibits an ultrahigh elastic strain limit, near ideal strength (shear strength ~4 GPa) and plastic deformation at the micron-scale, one order of magnitude larger than samples made using focused ion beams, due to superior surface quality. Further, the micron-scale plasticity of Si allows the investigation of the intrinsic size effects and dislocation behavior in diamond-structured materials. This reveals a transition in deformation mechanisms from full to partial dislocations upon increasing specimen size at ambient temperature. Deformation mechanism transitions at ambient and elevated temperatures are discussed as a function of surface quality. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Mechanical Properties, Electronic Materials, Characterization |