| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XIII
|
| Presentation Title |
Controlling Defects in Epitaxial Thin Film Growth of Mg2Sn1-xGex for Thermoelectric Device Applications |
| Author(s) |
Takeaki Sakurai, Senados Kenneth Magallon, Takashi Aizawa, Isao Ohkubo, Akira Uedono, Takao Mori |
| On-Site Speaker (Planned) |
Takeaki Sakurai |
| Abstract Scope |
Optimization of defects in thermoelectric devices has emerged as a key to improve their performance. In this study, we investigate how the modulation of the Mg flux rate in molecular beam epitaxy growth affects defect formation in Mg2Sn1-xGex epitaxial thin films. Higher Mg flux rates significantly increase the carrier mobility, Seebeck coefficient, and the power factor. At the same time, X-ray diffraction of the thin films showed that the higher the Mg flux fraction, the higher the crystallinity. In contrast, high Mg flux rates suggested the presence of Mg interstitials in the moiré pattern. The total thermal conductivity of the thin films tends to decrease with increasing Mg flux fraction. These findings suggest a delicate balance between the improvement in overall crystal structure and the presence of local structural changes may contribute to the decrease in overall thermal conductivity. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Energy Conversion and Storage, Characterization, |