| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
2024 Graduate Student Poster Contest
|
| Presentation Title |
SPG-26: Influence of Microstructure on the Degradation of Electrical Resistivity of AlN Ceramics |
| Author(s) |
Ken Kotsugai, Junichi Tatami, Motoyuki Iijima, Katsuhiro Itakura, Ryohei Yagi, Ryohei Fujimi |
| On-Site Speaker (Planned) |
Ken Kotsugai |
| Abstract Scope |
AlN has intrinsically high electrical insulation due to its wide band gap. However, the formation of electrical conduction paths in AlN ceramics possibly degrades their electrical resistivity. Therefore, understanding the degradation mechanism is required to improve the electrical resistivity. In this study, the electrical resistivity of AlN ceramics with various microstructures was investigated. As a result, it was found that the geometry of the secondary phase is one of the dominant factors in the electrical resistivity of AlN ceramics. For simple experiment, laminated ceramics of AlN and YAG, which is a typical grain boundary secondary phase, were prepared. The electrical resistivity perpendicular to the stacking direction was much lower than not only that parallel to the stacking direction but also that of the AlN and YAG ceramics alone. This result suggests that the interface between AlN and YAG has a significant influence on the degradation of the electrical resistivity. |