| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
2024 Technical Division Student Poster Contest
|
| Presentation Title |
SPG-10: Effects of Grain Growth Mechanisms in Cu-based Alloy Thin Films for Low Resistivity |
| Author(s) |
Jihyeon Lim, Donghyun Park, Jaeseong Lee, Dongwoo Lee |
| On-Site Speaker (Planned) |
Jihyeon Lim |
| Abstract Scope |
The continuous downscaling of integrated circuits poses a formidable challenge in increasing the resistivity of Cu interconnect lines. Historically, semiconductors transitioned from using Al to Cu as the material for interconnect lines. However, the effectiveness of Cu as an interconnect material is expected to be constrained due to the scaling of the interconnect dimension and increasing complexity of the structure and current path in the BEOL. Consequently, there is a growing demand for the replacement of Cu. The material holds the potential to reduce its resistivity through specular electron interface scattering or minimal grain boundary reflection, especially with larger grain sizes. We investigate how much the resistance is improved with the grain growth mechanism by incorporating solute additions, and validate the changes in grain size through the competition between misfit energy and kinetic solute drag. Additionally, this work suggests variation in activation energy and improvements in electromigration through solutes addition. |
| Proceedings Inclusion? |
Undecided |
| Keywords |
Thin Films and Interfaces, Copper / Nickel / Cobalt, Electronic Materials |