| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXIV
|
| Presentation Title |
Bonding Mechanism for Cu/SiO2 Hybrid Joints |
| Author(s) |
Chih Chen |
| On-Site Speaker (Planned) |
Chih Chen |
| Abstract Scope |
Cu/SiO2 hybrid joints have emerged to be the solutions for ultra-fine pitch vertical interconnects for advanced packaging. To fabricate the hybrid joints, recessed Cu pads in SiO2 vias are prepared. After alignment, the SiO2 dielectric layers are bonded at room temperature first. Then the temperature is increased to form Cu-Cu metal bonding. Due to the Cu has a higher thermal expansion coefficient than the SiO2, the Cu pads on the both top and bottom chips expand to provide the compress stress needed for the Cu-Cu bonding. The expansion of Cu is critical to form a robust bonding. In this presentation, the bonding mechanism of SiO2-SiO2 and Cu-Cu will be presented. In addition, the factors that affect the Cu expansion will be discussed in the conference. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Surface Modification and Coatings, Joining |