| Abstract Scope |
Gallium oxide (Ga2O3) find interesting applications in a variety of electronic, optical, and optoelectronic devices, such as field effect transistors, switching memories, high temperature gas sensors, photocatalysts, deep-UV photodetector and transparent conducting electrodes. However, understanding the structure-property correlation in (Ga2O3) as a function of processing conditions is the key to realized device-quality films and enhanced performance. In this context, the present work was focused on the deposition of (Ga2O3) films using pulsed-laser deposition and understand the structure, morphology, and optical properties as a function of the deposition temperature, which is varied in the range of 25-600 oC. A more detailed account of the growth behavior, crystal structure, morphology and optical properties of PLD β-Ga2O3 films will be discussed to establish a structure-property correlation. |