| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials
|
| Presentation Title |
Electro-recrystallization in Pure Cu Metal Induced by Current Stressing: A Comprehensive Study of Microstructure, Crystallinity, and Properties |
| Author(s) |
Hsuan-Cheng Huang, Meng-Chun Chiu, Pao-Hsuan Yang, Chien-Lung Liang |
| On-Site Speaker (Planned) |
Hsuan-Cheng Huang |
| Abstract Scope |
Cu is the most commonly used metal in microelectronic packaging due to its excellent electrical and mechanical performance. In this study, the effects of current stressing on the microstructure and properties of pure Cu metals were investigated. As-rolled Cu strips were stressed with direct current at 6.5-8.5 × 10^4 A/cm^2 for 1 h under an ambient condition. Current stressing induced decreases in the micro-hardness and electrical resistivity of up to 51.2% and 5.1%, respectively. Current-induced recrystallization was proposed for the properties variations based on the grain size, texture, and misorientation analyses by the electron backscattered diffraction (EBSD). The crystallinity of pure Cu metals increased with increasing current density, as shown by the X-ray diffraction (XRD), corresponding to the geometrically necessary dislocation (GND) density reduction. The thermal benchmark experiments have further revealed the synergistic thermal and athermal effects of current stressing on the microstructure and properties of the pure Cu metals. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Copper / Nickel / Cobalt, Characterization |