| About this Abstract |
| Meeting |
MS&T21: Materials Science & Technology
|
| Symposium
|
Probing Defect Properties and Behavior under Mechanical Deformation and Extreme Conditions
|
| Presentation Title |
Phase-field Modeling of Electromigration-mediated Void Migration and Coalescence under Mechanical and Current-stressing in Interconnect Lines |
| Author(s) |
William Farmer, Sree Shivani Vemulapalli, Kumar Ankit |
| On-Site Speaker (Planned) |
William Farmer |
| Abstract Scope |
Electromigration (EM) occurs due to a momentum transfer between the metallic ions of the interconnect and the electrons, which drift in the direction of the externally applied electric field. EM-induced defects can manifest as nucleation and growth of micro-voids and hillocks, grain boundary (GB) slits, and metallization, which lead to failure of interconnects and soldered joints. In order to gain an understanding of interconnect failure mechanisms, we use a phase-field model to simulate the morphological evolution of voids under different operating conditions. Our simulations display the effects of elastic inhomogeneity, high current densities, and applied and back-stress on the migration and coalescence of voids. Based on an in-depth parametric study, inferences are drawn to formulate strategies for which the void migration in interconnects can be suppressed. |