| Abstract Scope |
Accurately acquiring the resistance of the sensor is always important for the quantitative recognition of mixed gases using metal oxide semiconductor. In this work, a SnO2 gas sensor was designed, a gas sensor test circuit was developed, and PID temperature control technology was employed. On the base, the surface temperature of the prepared sensor can be ensured unaffected by external factors, and the accuracy of resistance testing can be guaranteed. It was found that at 250°C, the sensor resistance exhibited ohmic natures when the current through the material is below 4.34 μA. Conversely, when the current was above this current thresholds, the resistance decreases. Furthermore, it was found when the operating temperatures were increased from 250°C to 370°C, the current thresholds were also incearsed to 22.04 μA. The findings in this work are beneficial for improving the quantitative recognition of mixed gases using metal oxide semiconductors. |