| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Epitaxy of Group-IV Semiconductors on Two-Dimensional Materials Stack |
| Author(s) |
Jinkyoung Yoo |
| On-Site Speaker (Planned) |
Jinkyoung Yoo |
| Abstract Scope |
Physical limits of preparation/fabrication of semiconducting materials have been overcome by advances in nanoscience. Emergence of two-dimensional (2D) materials offers novel opportunities of expanding applications of group-IV semiconductors.
To deliver novel functionalities for exploring quantum and next-generation electronic device applications, heterostructuring is an effective way to fulfill materials quality control in a scalable way and reproducible accomplishment of desired materials properties.
The heterostructures in this study were prepared by epitaxy techniques, such as van der Waals epitaxy and remote epitaxy. Micro/nanostructural characterization was performed by transmission electron microscopy. Electrical and optical properties of the heterostructures were characterized by multi-probe current–voltage measurement and Raman microscopy. Heterostructures composed of 2D and conventional materials are being studied for preparation of an architecture composed of incommensurate materials, area-selective deposition, and realization of unconventional semiconductor devices. |