| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
2024 Undergraduate Student Poster Contest
|
| Presentation Title |
SPU-28: Epitaxial Growth of Highly Conductive α-Ga2O3 by Suboxide Molecular-Beam Epitaxy |
| Author(s) |
Julianne Chen, Jacob Steele, Darrell G. Schlom |
| On-Site Speaker (Planned) |
Julianne Chen |
| Abstract Scope |
Growth of alpha Ga2O3 on flat m-plane sapphire (Al2O3) substrates was achieved through a thin, high temperature alpha Ga2O3 buffer with 8% aluminum and growth conditions such as 480C film growth temperature and high ozone pressure of 5×10-6 torr. Record breaking results such as symmetrical rocking curve FWHM (0.167°), resistivity (1.67×10-3 Ωcm), mobility (81.7 cm2V-1s-1), and dislocation density (2.48×108 cm-2) were achieved. |