About this Abstract |
Meeting |
MS&T24: Materials Science & Technology
|
Symposium
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Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
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Presentation Title |
2D Amorphous Carbon Dielectric Prepared from Solution Precursor for Nanoelectronics |
Author(s) |
Viet Hung Pham, Christopher Matranga, Congjun Wang |
On-Site Speaker (Planned) |
Congjun Wang |
Abstract Scope |
The preparation of amorphous 2D nanodielectrics represents a major challenge due to the metastable nature of amorphous phases. We describe a scalable and solution-based strategy to prepare wafer-scale 2D amorphous carbon with thickness down to 1–2 atomic layers from coal-derived carbon quantum dots as precursors. The prepared atomically thin 2D amorphous carbon can be suspended over cavities as freestanding membranes with high modulus of 400±100 GPa and demonstrate robust dielectric properties with dielectric strength above 20 MV·cm-1 and leakage current density below 10-4 A·cm-2 through a scaled thickness of three-atomic layers. When implemented as ultrathin gate dielectrics in 2D transistors or ion-transport media in memristors, they enable exceptional device performance and spatiotemporal uniformity, resulting from their amorphous form, intrinsic ultrathinness, and 2D atomic structure. |