| About this Abstract |
| Meeting |
MS&T24: Materials Science & Technology
|
| Symposium
|
Advanced Characterization of Materials for Nuclear, Radiation, and Extreme Environments V
|
| Presentation Title |
Impact of Amorphous Pockets on Displacement Damage Evolution in Crystalline Silicon |
| Author(s) |
Henry Richard Little, Christopher Matthews, Blas Pedro Uberuaga, Christopher Lenyk |
| On-Site Speaker (Planned) |
Henry Richard Little |
| Abstract Scope |
Displacement damage in silicon has been extensively studied in research sponsored by electronics manufacturers, however the assumed high temperature annealing involved in the ion implantation process has left gaps in the body of knowledge. Collision cascades in silicon leave behind amorphous pockets which anneal at temperatures above 400°C but are stable at the operating temperatures of many radiation-vulnerable devices, and the impact of these pockets on displacement damage evolution and device performance is not well known. In this work, a cluster dynamics (CD) model is developed to incorporate amorphous pockets alongside other important species in the silicon damage evolution process, including <311> defects and dislocation loops. The Los Alamos National Laboratory CD code, Centipede, is used to solve the model equations subject to a continuous radiation source term to characterize the role of amorphous pockets in the nucleation of extended defects in crystalline silicon in an active radiation environment. |