| About this Abstract |
| Meeting |
MS&T22: Materials Science & Technology
|
| Symposium
|
Advanced Characterization of Materials for Nuclear, Radiation, and Extreme Environments III
|
| Presentation Title |
Detection of Radiation Vulnerability in Microelectronic Systems |
| Author(s) |
Sergei Pavlovich Stepanoff, Md Abu Jafar Rasel, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton |
| On-Site Speaker (Planned) |
Sergei Pavlovich Stepanoff |
| Abstract Scope |
As electronic systems become larger and more complex, detection of the most vulnerable regions (MVR) to radiation exposure becomes increasingly difficult and time consuming using traditionally accepted methods, such as pulsed laser, microbeam, or in-situ radiation techniques, for MVR detection. We present a heuristic approach that topologically maps two device conditions to identify the MVR. The first identifies regions with the highest mechanical strain or density of defects and interfaces using lock-in thermography to construct a phase map of the device structure. The second identifies regions with the highest electrical field. It is hypothesized that the region with the highest structural phase contrast and electrical field will also exhibit the highest sensitivity to incoming radiation. The design is used to examine the well-studied operational amplifier LM124, which shows very good agreement with the literature and has potential to improve analysis time by orders of magnitude over current testing methodologies. |