| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Spatial-Selective Electrostatic Doping of Graphene Through Metal Atom Precipitation at Substrate Heterointerface |
| Author(s) |
Ke Ma, Matthew P Sherburne, Zakaria Y Al Balushi, Jiayun Liang |
| On-Site Speaker (Planned) |
Ke Ma |
| Abstract Scope |
Precisely controlling the formation of heavily doped regions in monolayer graphene is crucial for its applications in emerging heterostructures and device technologies. Traditional doping schemes often struggle to maintain high carrier densities without compromising material integrity. This study presents a novel approach for spatial-selective electrostatic doping of monolayer graphene using diamond-like carbon (DLC) substrates with implanted ions. Using first-principles calculations, we explored the electrostatic interaction between graphene and implanted ions in DLC substrate and demonstrated that maximum doping was achieved when implanted ions precipitate at the heterointerface. This finding is corroborated by experimental results where annealing-induced diffusion of gallium ions toward graphene-DLC heterointerface enables ambipolar tuning of graphene work function and carrier density. Further calculations on the extension of this doping mechanism to different elements revealed its potential to achieve both n- and p-type doping, highlighting its effectiveness and versatility in modulating the electronic and chemical behavior of monolayer graphene. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Computational Materials Science & Engineering, Electronic Materials, Nanotechnology |