| Abstract Scope |
The methodology behind TESCAN TENSOR - the world’s first Integrated, Precession-assisted, Analytical 4D-STEM will be explained as the solution of choice for high-throughput nanoscale applications. With TESCAN TENSOR, it is possible to map composition, phases, and crystal orientations across a large field of view, with spatial resolution down to a few nanometers for multimodal characterization of functional materials, semiconductor thin films, and nano- particles.
Electronic materials manufacturers require comprehensive analytical capabilities, with the ability to measure chemical and structural properties. Analytical electron microscopy, incorporating EDX, and 4D-STEM phase/orientation analyses will be shown to be crucial for both process development and failure analysis of battery, and semiconductor devices.
An investigation into the crystallographic grain reorientation caused by Vickers indentation induced plastic deformation, studied by precession-assisted 4D-STEM with automated crystal orientation analysis will be presented, including high resolution mapping of the resulting indentation induced crystallographic orientation gradient. |