| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
2024 Technical Division Student Poster Contest
|
| Presentation Title |
SPG-47: Ni/Ga Ratio Effect on Cu-Cu TLP Bonding Process |
| Author(s) |
Tzu-hsuan Huang, Jian-Wei Huang, Zhih-Feng Lin, Shih-kang Lin |
| On-Site Speaker (Planned) |
Tzu-hsuan Huang |
| Abstract Scope |
Electronic packaging provides chip protection, signal transfer and heat dissipation. Driven by the wearable device become smaller, thinner but more multifunctional, Cu-to-Cu bonding plays a key role in advanced packaging industry. Because of bonding size shrinkage, solder bump forming fully intermetallic compound (IMC) joint after reflow process which is brittle, low conductivity and poor reliability. In addition, CTE mismatch cause warpage during high temperature joining process. Therefore, it is essential to come up with a new approach for fabricating IMC-free joints with low bonding temperature.
In this article we reveal the Cu/Ni/Ga interface reaction with different Ni/Ga ratio by cross section element analysis and phase confirming. We propose a transient liquid phase bonding process by controlling electroplated Ni/Ga ratio and show its potential of forming IMC-free Cu/Cu solid solution joints. |
| Proceedings Inclusion? |
Undecided |
| Keywords |
Joining, Electronic Materials, |