Abstract Scope |
Modern thin film deposition processes increasingly require atomic scale precision, and challenges exist both in the characterization and control of such processes. Concerning the former, over the past several years our group has been employing supersonic molecular beam techniques and in situ real time X-ray synchrotron radiation to examine a variety of systems. In this presentation we will provide examples concerning the characterization of thin film deposition processes concerning two important emerging thin film materials: organic small molecule semiconductors and transition metal dichalcogenides (TMDs). Concerning the latter challenge, we will review our recent efforts in atomic scale control of deposition processes, namely, using atomic layer deposition. We have particular interest in area-selective, composition dependent deposition. We have been pursuing a strategy where we intentionally introduce a third species, which we call the co-adsorbate, coincident with the thin film precursor to exploit competitive interactions and achieve area selective deposition. |