| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials
|
| Presentation Title |
Cu-Cu Interconnection With Electroplated Ga and Ni UBM |
| Author(s) |
Tzu-hsuan Huang, Jian-wei Huang, Zhih-feng Lin, Shih-kang Lin |
| On-Site Speaker (Planned) |
Tzu-hsuan Huang |
| Abstract Scope |
Cu-Cu interconnection is an essential component in advanced high-density electronic packaging as well as high-power devices for electric vehicles and 5G communications. The functions of Cu-Cu interconnection involve chip protection, signal transmission, and heat dissipation. However, conventional soldering process with Sn-based alloys may result in the formation of interfacial defects and even full intermetallic compound joints as the bump size shrinks, which would lead to poor mechanical/electrical/thermal properties and reliability issues. Sintering of Ag nanoparticles is an alternative bonding method with excellent electrical and thermal conductivity, but it involves high materials cost and potentially has electrochemical migration issue. In this talk, we will report a reliable and cost-effective Cu-to-Cu bonding technology with electroplated Ga filler materials and Ni UBM. The mechanism of transient liquid phase (TLP) bonding for the Cu/Ni/Ga/Ni/Cu reaction couples was elaborated based on the cross-section analyses, which opens a door for practical industrial applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Joining, |