| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advances and Discoveries in Non-equilibrium Driven Nanomaterials and Thin Films
|
| Presentation Title |
Electron Beam Holography and Characterization of Defects in Multilayered Semiconductor Thin Films |
| Author(s) |
Ramasis Goswami, Margo Strauch, Syed Qadri |
| On-Site Speaker (Planned) |
Ramasis Goswami |
| Abstract Scope |
Understanding the space charge profiles or electrostatic potential distribution is of crucial importance for the design and operation of devices. We quantify the electrostatic potential distribution by off-axis electron beam holography on thin polycrystalline AlN deposited on Pt/HfO2/Si deposited by atomic layer epitaxy. The incident electron wave undergoes phase shifts as a result of the mean inner potential of the material, and the electric field is quantified from the phase shift. A phase change of 1.4 rad due to the accumulation of charge in the vicinity of columnar AlN grain boundaries has been detected. In addition, we will present the nature of defects and interfaces using TEM and X-ray topography in multilayered InAs/GaInSb/InAs/AlGaInSb superlattice films deposited by MBE for infrared detectors. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Electronic Materials, Characterization |