| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Nanostructured Materials in Extreme Environments III
|
| Presentation Title |
Spatially Selective Catalyst Irradiation Induced Graphitization of Monocrystalline Diamond for Semiconductor Applications |
| Author(s) |
Alexandros Spyromilios, Peter Hosemann |
| On-Site Speaker (Planned) |
Alexandros Spyromilios |
| Abstract Scope |
Diamond is a metastable tetrahedral carbon allotrope that shows promise as a useful material in semiconductor technology due to extraordinary material properties, including an outstanding heat transfer coefficient and low electrical conductivity. Effective utilization of these properties in the current semiconductor ecosystem requires interoperability between Silicon and alternative semiconductor materials. A technique for spatially selective transformation of diamond into graphite in bulk monocrystalline diamond is therefore proposed. The process involves irradiating diamond with a catalyst (Fe) and annealing at 600-1000˚C. As a result, instead of producing subsurface graphite solely by radiation damage, which generally requires doses upwards of 10^15/cm^2, the catalyst achieves spatially selective graphitization at comparatively lower doses. This technique can be employed for damage free, high spatial resolution, high power, subsurface circuits entirely within a diamond, opening new avenues for hybrid semiconductor designs and other applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Electronic Materials, Other |