| About this Abstract |
| Meeting |
2024 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials
|
| Presentation Title |
Electromigration Behavior of Nano-twinned Cu-Ag Alloy Thin Films |
| Author(s) |
Fan-Yi Ouyang, Ko-Chieh Hsueh, Yung-Pei Lin |
| On-Site Speaker (Planned) |
Yung-Pei Lin |
| Abstract Scope |
The nano-twinned structure is an outstanding mechanism to improve mechanical strength and ductility simultaneously without significantly increasing its electrical resistivity. This study performed electromigration tests on highly (111)-oriented nano-twinned CuAg interconnects under a current density of 3.5*105 A/cm2 at 150oC to understand their corresponding microstructural evolution and electromigration resistance. The results show that void formation and Ag protrusion were observed at the cathode and anode of nanotwinned Ag interconnects after 2000 hours, respectively. However, no damage was found for samples with 3.8 at% copper doping after 2000 hours, suggesting that the presence of Cu can significantly improve electromigration resistance. The different doping concentrations of Cu on the electromigration resistance of the samples and their failure mechanism of nanotwinned Ag and AgCu alloy samples will be discussed in detail in this talk. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Surface Modification and Coatings |