| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
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| Symposium
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Thin Films and Coatings: Properties, Processing and Applications
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| Presentation Title |
Material and Device Engineering for Multi Kilo Volt Class Vertical Ga2O3 Devices
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| Author(s) |
Nidhin Kurian Kalarickal, Advait Gilankar, Nabasindhu Das, Abishek Katta, Fikadu Alema, William Brandt, Andrei Osinsky |
| On-Site Speaker (Planned) |
Nidhin Kurian Kalarickal |
| Abstract Scope |
Ultra-wide band gap semiconductors such as Ga2O3 can offer leap ahead advancements in next generation power electronics thanks to the high breakdown field strength (8 MV/cm), good transport properties (μ~200 cm2/V-s) and availability of bulk substrates. In this talk, we will discuss advanced process and device engineering for Ga2O3 vertical high voltage devices. We have developed an in-situ etching technique for Ga2O3 using metal organic Ga precursors such as triethylgallium (TEGa). This purely chemical technique leverages the suboxide reaction between Ga and Ga2O3 to form volatile gallium suboxide (Ga2O). We will provide a detailed study of this etching method, including the effects of MOCVD chamber conditions, surface morphology, etch anisotropy, and electrical characteristics. The engineering and fabrication of p-NiO/Ga2O3 diodes, featuring space-modulated junction termination extension and achieving a power figure of merit of ~2 GW/cm² (close to the theoretical limit of state-of-the-art SiC diodes), will be discussed. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, |