| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XIII
|
| Presentation Title |
Influence of SnTe Stoichiometry on Thermoelectric Performance |
| Author(s) |
Chun-Han Ku, Alber T. Wu |
| On-Site Speaker (Planned) |
Chun-Han Ku |
| Abstract Scope |
SnTe has attracted considerable interest as a viable alternative to PbTe due to its notable thermoelectric properties. However, its relatively high lattice thermal conductivity and the volatility of Te pose challenges to its performance and reliability. This study examines the impact of varying SnTe thin film ratios and their aging effects. SnTe films were produced through co-sputtering with different compositions. Excess Sn or Te atoms can manifest as antisite defects or dopants. Antisite defects contribute additional electrons and holes, enhancing electrical conductivity, while dopants decrease lattice thermal conductivity, thereby improving thermoelectric properties. Long-term aging studies indicate that excess Sn and Te affect Te volatility, significantly impacting the material's long-term reliability and stability. Optimizing the composition and understanding long-term effects are thus crucial for the development of SnTe as a dependable thermoelectric material. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Thin Films and Interfaces, Characterization |