| About this Abstract |
| Meeting |
2025 TMS Annual Meeting & Exhibition
|
| Symposium
|
Structure and Dynamics of Metallic Glasses
|
| Presentation Title |
Tungsten-Based Thin Film Metallic Glass as Diffusion Barrier between Copper and Silicon |
| Author(s) |
Pei-Yu Chen, Jhen-De You, Chun-Hway Hsueh |
| On-Site Speaker (Planned) |
Pei-Yu Chen |
| Abstract Scope |
In this work, the performance of amorphous W–Ni–B Thin film metallic glass (TFMG) as a diffusion barrier between Cu and Si layers is reported. The W–Ni–B TFMG showed extremely high hardness of 20 GPa. To evaluate its thermal stability and barrier performance, Cu (150 nm)/W–Ni–B TFMG (10 nm)/Si stacked structures were annealed in high vacuum at various temperatures between 700 and 950°C for 30 min to examine inter-diffusion between Cu and Si. The findings indicated that W–Ni–B TFMG effectively blocked the intermixing of Cu and Si atoms at 800°C. However, failure of W–Ni–B TFMG barrier against Cu and Si inter-diffusion was observed after annealing at 950°C. Based on its unique combination of excellent barrier performance and high hardness, W–Ni–B TFMG could be deemed as a robust diffusion barrier for Cu interconnect technology. |
| Proceedings Inclusion? |
Planned: |