| About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Radiation Effects in Metals and Ceramics
|
| Presentation Title |
A New Numerical Method to Simulate Dislocation Self-climb |
| Author(s) |
Fengxian Liu, Edmund Tarleton, Alan C.F. Cocks |
| On-Site Speaker (Planned) |
Edmund Tarleton |
| Abstract Scope |
Dislocations can provide short circuit diffusion paths for atoms. This fast atomic transport, along the dislocation core region, known as core diffusion, accelerates the diffusion of impurities by more than three orders of magnitude compared to lattice diffusion. This allows dislocation motions perpendicular to the original slip system, known as dislocation self-climb (conservative climb) and is of particular importance in low-temperature creep and post-irradiation annealing. A variational principle is presented for the analysis of problems in which fast dislocation core diffusion is the dominant mechanism for material redistribution. A new finite element discretization method is employed to accelerate the simulation of dislocation self-climb. Self-climb dominated processes, including the evolution of elongated loops, dislocation dipoles and dislocation patterning during annealing of a large population of loops, involving both self-climb and glide motion are investigated. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |