About this Abstract |
Meeting |
2024 TMS Annual Meeting & Exhibition
|
Symposium
|
Electronic Packaging and Interconnection Materials
|
Presentation Title |
Numerical Modeling the Effect of Copper Solute on Electromigration Stress Development in Al Interconnects |
Author(s) |
James Gordineer, Ping-Chuan Wang |
On-Site Speaker (Planned) |
James Gordineer |
Abstract Scope |
Electromigration is a failure mechanism of major interest in the microelectronics industry. It has been well known that introducing copper solute into aluminum interconnects greatly increases the resistance against electromigration degradation. Aluminum electromigration is significantly slowed by presence of copper until the copper is preferentially electromigrated away, and it only occurs within the copper-depleted region and leads to short-range stress development. In this study, a numerical model is created to simulate the effects of copper solute on electromigration induced stress in an aluminum interconnect. The simulation results will be compared with experimental data from synchrotron-based x-ray microbeam topography and fluorescence techniques to extract material parameters related to the electromigration process in Al(Cu) alloy. This study could further our understanding of electromigration mitigation, particularly for alloy-based interconnects in advanced IC technologies. |
Proceedings Inclusion? |
Planned: |
Keywords |
Other, Electronic Materials, Thin Films and Interfaces |